transistor(pnp) features z complementary to 2sc1623 z high dc current gain: h fe =200 typ.(v ce =-6v,i c =-1ma) z high voltage: v ceo =-50v maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector- base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -100 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c = -1ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb =- 60 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a dc current gain h fe v ce =- 6v, i c = -1ma 90 600 collector-emitter saturation voltage v ce (sat) i c =-100ma, i b = -10ma -0.3 v base-emitter voltage v be i c =-1ma, v ce =-6v -0.58 -0.68 v transition frequency f t v ce =-6v, i c = -10ma 180 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 4.5 pf classification of h fe rank m4 m5 m6 m7 range 90-180 135-270 200-400 300-600 marking m4 m5 m6 m7 unit : mm so t -23 1. base 2. emitter 3. collector 1 date:2011/05 www.htsemi.com semiconductor jinyu 2sa8 1 2
2sa8 1 2 1 date:2011/05 www.htsemi.com semiconductor jinyu
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